ROHM US6T5TR

Manufacturer No:

US6T5TR

Manufacturer:

ROHM

Package:

6-SMD, Flat Leads

Description:

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount

Quantity:

In Stock :3929

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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US6T5TR Information

ROHM US6T5TR technical specifications, attributes, parameters and parts with similar specifications to ROHM US6T5TR.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
6-SMD, Flat Leads

Number of Pins
6

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e2

Type
Parameter

Pbfree Code
yes

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
6

ECCN Code
EAR99

Terminal Finish
TIN COPPER

Subcategory
Other Transistors

Max Power Dissipation
1W

Terminal Position
DUAL

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for ROHM US6T5TR.

Datasheets:

rohm-us6t5tr-datasheets-2300.pdf

US6T5TR Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 280MHz.During maximum operation, collector current can be as low as 2A volts.

US6T5TR Features

the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz