Rochester UPA2680T1E-E2-AT
Manufacturer No:
UPA2680T1E-E2-AT
Manufacturer:
Rochester
Package:
6-VDFN Exposed Pad
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 50mOhm @ 3A, 10V 190pF @ 10V 3.1nC @ 4.5V 20V 6-VDFN Exposed Pad
Quantity:
In Stock :3634
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
UPA2680T1E-E2-AT Information
Rochester UPA2680T1E-E2-AT technical specifications, attributes, parameters and parts with similar specifications to Rochester UPA2680T1E-E2-AT.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 6-VDFN Exposed Pad
- Supplier Device Package
- 6-MLP (3x3)
- Packaging
- Tape & Reel (TR)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250?A
- Type
- Parameter
- Input Capacitance (Ciss) (Max) @ Vds
- 190pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 3A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 3.1nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 20V
- FET Feature
- Schottky Diode (Isolated)
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Rochester UPA2680T1E-E2-AT.
UPA2680T1E-E2-AT Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 190pF @ 10V.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.
UPA2680T1E-E2-AT Features
a 20V drain to source voltage (Vdss)
UPA2680T1E-E2-AT Applications
There are a lot of Rochester Electronics, LLC
UPA2680T1E-E2-AT applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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12.28 M
Listed Part Number
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In-stock SKU
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