Renesas UPA1919TE-T1-AT

Manufacturer No:

UPA1919TE-T1-AT

Manufacturer:

Renesas

Package:

SC-95-6

Description:

MOSFET (Metal Oxide) P-Channel 58mOhm @ 3A, 4.5V 680 pF @ 10 V 6 nC @ 4 V 20 V SC-95-6

Quantity:

In Stock :5311

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

UPA1919TE-T1-AT Information

Renesas UPA1919TE-T1-AT technical specifications, attributes, parameters and parts with similar specifications to Renesas UPA1919TE-T1-AT.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
SC-95-6

Supplier Device Package
SC-95-6, Mini Mold Thin

Mfr
Renesas Electronics America Inc

Package
Tape & Reel (TR)

Product Status
Last Time Buy

Technology
MOSFET (Metal Oxide)

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
58mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id
1.5V @ 1mA

Type
Parameter

Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C
6A (Ta)

Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4 V

Drain to Source Voltage (Vdss)
20 V

Download datasheets and manufacturer documentation for Renesas UPA1919TE-T1-AT.

UPA1919TE-T1-AT Overview

A device's maximum input capacitance is 680 pF @ 10 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 20 V drain to source voltage (Vdss).