TOSHIBA TTC015B,Q

Manufacturer No:

TTC015B,Q

Manufacturer:

TOSHIBA

Package:

TO-225AA, TO-126-3

Description:

NPN 150°C (TJ) 100nA (ICBO) TO-225AA, TO-126-3 Through Hole

Quantity:

In Stock :9825

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Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

TTC015B,Q Information

TOSHIBA TTC015B,Q technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TTC015B,Q.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-225AA, TO-126-3

Supplier Device Package
TO-126N

Mfr
Toshiba Semiconductor and Storage

Package
Tray

Product Status
Active

Operating Temperature
150°C (TJ)

Power - Max
1.5 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 2V

Type
Parameter

Current - Collector Cutoff (Max)
100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max)
80 V

Current - Collector (Ic) (Max)
2 A

Frequency - Transition
150MHz

Download datasheets and manufacturer documentation for TOSHIBA TTC015B,Q.

TTC015B,Q Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA, 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.