ROHM TT8U1TR
Manufacturer No:
TT8U1TR
Manufacturer:
ROHM
Package:
8-SMD, Flat Lead
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 105m ? @ 2.4A, 4.5V ±10V 850pF @ 10V 6.7nC @ 4.5V 20V 8-SMD, Flat Lead
Quantity:
In Stock :1782
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TT8U1TR Information
ROHM TT8U1TR technical specifications, attributes, parameters and parts with similar specifications to ROHM TT8U1TR.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- TIN COPPER
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ROHM TT8U1TR.
Datasheets:
TT8U1TR Overview
A device's maximum input capacitance is 850pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
TT8U1TR Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 55 ns
a 20V drain to source voltage (Vdss)
TT8U1TR Applications
There are a lot of ROHM Semiconductor
TT8U1TR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
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