Texas Instruments TRF0208RPVTSP/EM
Manufacturer No:
TRF0208RPVTSP/EM
Manufacturer:
Texas Instruments
Package:
Description:
Radiation-hardness-assured (RHA), near-DC to 11GHz 3dB BW single-ended to differential RF amplifier
Quantity:
In Stock :3032
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
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Date Code：Within 2 Years
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TRF0208RPVTSP/EM Information
Texas Instruments TRF0208RPVTSP/EM technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments TRF0208RPVTSP/EM.
- Type
- Parameter
- Type
- RF FDA
- Frequency (min) (MHz)
- 0.01
- Frequency (max) (MHz)
- 11000
- Gain (typ) (dB)
- 16
- Noise figure (typ) (dB)
- 6.8
- OIP3 (typ) (dBm)
- 36
- P1dB (typ) (dBm)
- 14.5
- Frequency of harmonic distortion measurement (GHz)
- 2
- 3rd harmonic (dBc)
- -63
- OIP2 (typ) (dBm)
- 60
- Type
- Parameter
- 2nd harmonic (dBc)
- -65
- Supply voltage (V)
- 3.3
- Current consumption (mA)
- 130
- Number of channels
- 1
- Operating temperature range (°C)
- 25 to 25
- Rating
- Space
- Output enable
- Yes
- Radiation, SEL (MeV·cm2/mg)
- 75
- Radiation, TID (typ) (rad)
- 100000
- Package
- WQFN-FCRLF (RPV)
Download datasheets and manufacturer documentation for Texas Instruments TRF0208RPVTSP/EM.
Data sheet:
Radiation & reliability report:
Technical article:
The TRF0208-SP is a very high performance fully differential amplifier (FDA) optimized for radio frequency (RF) applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high-performance AFE7950-SP or ADC12DJ5200-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using TI’s advanced complementary BiCMOS process, and available in a space-saving WQFN-FCRLF package.
The TRF0208-SP operates on a single-rail supply and consumes about 138mA of active current. A power-down feature is available for power savings.
- Standard microcircuit drawing (SMD), 5962-24202
- Radiation:
- Total ionizing dose (TID)
- Radiation hardness assurance (RHA) up to 100krad (Si) TID
- Enhanced low dose rate sensitivity (ELDRS) free process
- High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
- Single event effects (SEE)
- Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
- Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
- Total ionizing dose (TID)
- Space-grade QMLP
- Lead-free construction
- Extended temperature range: –55°C to +125°C
- Excellent performance driving RF ADCs
- Fixed power gain of 16dB in single-ended-to-differential mode
- Bandwidth: 11GHz, 3dB
- Gain flatness: 8GHz, 1dB
- OIP3: 36dBm (2GHz), 32dBm (6GHz)
- P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
- NF: 6.8dB (2GHz), 6.8dB (6GHz)
- Gain and phase imbalance: ±0.3dB and ±3º
- Power-down feature
- Single-supply operation: 3.3V
- Active current: 138mA
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