Texas Instruments TRF0208RPVT/EM
Manufacturer No:
TRF0208RPVT/EM
Manufacturer:
Texas Instruments
Package:
Description:
Radiation-tolerant, near-DC to 11GHz 3dB BW single-ended to differential RF amplifier
Quantity:
In Stock :1289
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TRF0208RPVT/EM Information
Texas Instruments TRF0208RPVT/EM technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments TRF0208RPVT/EM.
- Type
- Parameter
- Type
- RF FDA
- Frequency (min) (MHz)
- 0.01
- Frequency (max) (MHz)
- 11000
- Gain (typ) (dB)
- 16
- Noise figure (typ) (dB)
- 6.8
- OIP3 (typ) (dBm)
- 36
- P1dB (typ) (dBm)
- 14.5
- Frequency of harmonic distortion measurement (GHz)
- 2
- 3rd harmonic (dBc)
- -63
- OIP2 (typ) (dBm)
- 60
- Type
- Parameter
- 2nd harmonic (dBc)
- -65
- Supply voltage (V)
- 3.3
- Current consumption (mA)
- 130
- Number of channels
- 1
- Operating temperature range (°C)
- -55 to 125
- Rating
- Catalog, Space
- Radiation, SEL (MeV·cm2/mg)
- 43
- Radiation, TID (typ) (rad)
- 30000
- Package
- WQFN-FCRLF (RPV)
- Pins
- 12
Download datasheets and manufacturer documentation for Texas Instruments TRF0208RPVT/EM.
Radiation & reliability report:
EVM User's guide:
Certificate:
Technical article:
Data sheet:
The TRF0208-SEP is a very high performance fully differential amplifier (FDA) optimized for radio frequency (RF) applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high-performance AFE7950-SEP or ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.
The TRF0208-SEP operates on a single-rail supply and consumes about 138mA of active current. A power-down feature is available for power saving.
- Vendor item drawing available, VID V62/23605
- Radiation:
- Total ionizing dose (TID)
- Radiation hardness assurance (RHA) up to 30krad (Si) TID
- Enhanced low dose rate sensitivity (ELDRS) free process
- High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
- Single event effects (SEE)
- Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
- Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
- Total ionizing dose (TID)
- Space-enhanced plastic (SEP)
- Lead-free construction
- Extended temperature range: –55°C to +125°C
- Excellent performance driving RF ADCs
- Fixed power gain of 16dB in single-ended-to-differential mode
- Bandwidth: 11GHz, 3dB
- Gain flatness: 8GHz, 1dB
- OIP3: 36dBm (2GHz), 32dBm (6GHz)
- P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
- NF: 6.8dB (2GHz), 6.8dB (6GHz)
- Gain and phase imbalance: ±0.3dB and ±3º
- Power-down feature
- Single-supply operation: 3.3V
- Active current: 138mA
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