

TI TPS1100DG4
Manufacturer No:
TPS1100DG4
Manufacturer:
Package:
SOIC
Description:
-15V SOIC
Quantity:
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TPS1100DG4 information
TI TPS1100DG4 technical specifications, attributes, parameters and parts with similar specifications to TI TPS1100DG4.
- Type
- Parameter
- Mount
- Surface Mount
- Package / Case
- SOIC
- Number of Pins
- 8
- JESD-609 Code
- e4
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Operating Temperature
- 125°C
- Min Operating Temperature
- -40°C
- Additional Feature
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Subcategory
- Other Transistors
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Pin Count
- 8
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 791mW
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 791mW
- Turn On Delay Time
- 4.5 ns
- Transistor Application
- SWITCHING
- Rise Time
- 10ns
- Polarity/Channel Type
- P-CHANNEL
- Fall Time (Typ)
- 10 ns
- Turn-Off Delay Time
- 13 ns
- Continuous Drain Current (ID)
- 1.6A
- Gate to Source Voltage (Vgs)
- 2V
- Drain to Source Breakdown Voltage
- 15V
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance
- 180mOhm
- Rds On Max
- 180 m?
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for TI TPS1100DG4.
TPS1100DG4 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 15V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 15V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 180mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 2VV.The transistor must receive a -15V drain to source voltage (Vdss) in order to function.
TPS1100DG4 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 180mOhm
a -15V drain to source voltage (Vdss)
TPS1100DG4 Applications
There are a lot of Texas Instruments
TPS1100DG4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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