

TOSHIBA TPH2900ENH,L1Q
Manufacturer No:
TPH2900ENH,L1Q
Manufacturer:
Package:
8-PowerVDFN
Description:
N-Channel Cut Tape (CT) 29m Ω @ 16.5A, 10V ±20V 2200pF @ 100V 22nC @ 10V 200V 8-PowerVDFN
Quantity:
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TPH2900ENH,L1Q information
TOSHIBA TPH2900ENH,L1Q technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TPH2900ENH,L1Q.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Current - Continuous Drain (Id) @ 25℃
- 33A Ta
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Power Dissipation (Max)
- 78W Tc
- Turn Off Delay Time
- 36 ns
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- U-MOSVIII-H
- Published
- 2014
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 20 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 29m Ω @ 16.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 2200pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Rise Time
- 8ns
- Drain to Source Voltage (Vdss)
- 200V
- Vgs (Max)
- ±20V
- Continuous Drain Current (ID)
- 33A
- Gate to Source Voltage (Vgs)
- 20V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for TOSHIBA TPH2900ENH,L1Q.
TPH2900ENH,L1Q Overview
The maximum input capacitance of this device is 2200pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 33A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.
TPH2900ENH,L1Q Features
a continuous drain current (ID) of 33A
a 200V drain to source voltage (Vdss)
TPH2900ENH,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPH2900ENH,L1Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

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Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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