TOSHIBA TPH2010FNH,L1Q
Manufacturer No:
TPH2010FNH,L1Q
Manufacturer:
TOSHIBA
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 198mOhm @ 2.8A, 10V ±20V 600pF @ 100V 7nC @ 10V 250V 8-PowerVDFN
Quantity:
In Stock :3339
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Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TPH2010FNH,L1Q Information
TOSHIBA TPH2010FNH,L1Q technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TPH2010FNH,L1Q.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Supplier Device Package
- 8-SOP Advance (5x5)
- Weight
- 850.995985mg
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- U-MOSVIII-H
- Type
- Parameter
- Published
- 2014
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 1.6W Ta 42W Tc
- Turn On Delay Time
- 14 ns
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for TOSHIBA TPH2010FNH,L1Q.
TPH2010FNH,L1Q Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 600pF @ 100V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 168mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TPH2010FNH,L1Q Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 168mOhm
a 250V drain to source voltage (Vdss)
TPH2010FNH,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPH2010FNH,L1Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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