TOSHIBA TPCA8052-H(T2L1,VM

Manufacturer No:

TPCA8052-H(T2L1,VM

Manufacturer:

TOSHIBA

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 11.3m ? @ 10A, 10V ±20V 2110pF @ 10V 25nC @ 10V 40V 8-PowerVDFN

Quantity:

In Stock :2967

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

TPCA8052-H(T2L1,VM Information

TOSHIBA TPCA8052-H(T2L1,VM technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TPCA8052-H(T2L1,VM.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
8-PowerVDFN

Operating Temperature
150°C

Packaging
Cut Tape (CT)

Series
U-MOSVI-H

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

ECCN Code
EAR99

Technology
MOSFET (Metal Oxide)

Type
Parameter

Power Dissipation-Max
1.6W Ta 30W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
11.3m ? @ 10A, 10V

Vgs(th) (Max) @ Id
2.3V @ 200?A

Input Capacitance (Ciss) (Max) @ Vds
2110pF @ 10V

Current - Continuous Drain (Id) @ 25°C
20A Ta

Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for TOSHIBA TPCA8052-H(T2L1,VM.

TPCA8052-H(T2L1,VM Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2110pF @ 10V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).