TOSHIBA TPC8021-H(TE12LQ,M
Manufacturer No:
TPC8021-H(TE12LQ,M
Manufacturer:
TOSHIBA
Package:
8-SOIC (0.173, 4.40mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 17mOhm @ 5.5A, 10V ±20V 640pF @ 10V 11nC @ 10V 30V 8-SOIC (0.173, 4.40mm Width)
Quantity:
In Stock :8017
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TPC8021-H(TE12LQ,M Information
TOSHIBA TPC8021-H(TE12LQ,M technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TPC8021-H(TE12LQ,M.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.173, 4.40mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SOP (5.5x6.0)
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1W Ta
- Power Dissipation
- 1.9W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id
- 2.3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 640pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 11A Ta
Download datasheets and manufacturer documentation for TOSHIBA TPC8021-H(TE12LQ,M.
TPC8021-H(TE12LQ,M Overview
A device's maximum input capacitance is 640pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 17mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
TPC8021-H(TE12LQ,M Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 17mOhm
a 30V drain to source voltage (Vdss)
TPC8021-H(TE12LQ,M Applications
There are a lot of Toshiba Semiconductor and Storage
TPC8021-H(TE12LQ,M applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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