Renesas TP70H150G4LSGB-TR
Manufacturer No:
TP70H150G4LSGB-TR
Manufacturer:
Renesas
Package:
Description:
700V 150mΩ SuperGaN FET in PQFN88 Industry Package
Quantity:
In Stock :7321
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TP70H150G4LSGB-TR Information
Renesas TP70H150G4LSGB-TR technical specifications, attributes, parameters and parts with similar specifications to Renesas TP70H150G4LSGB-TR.
- Type
- Parameter
- Pkg. Type
- PQFN88
- Carrier Type
- Tape & Reel
- Moisture Sensitivity Level (MSL)
- 3
- Mounting Type
- Surface Mount
- Temp. Range
- -55 to +150°C
- Country of Assembly
- China
- Country of Wafer Fabrication
- Japan
- Ciss (Typical) (pF)
- 491
- Coss (Typical) (pF)
- 27
- FET Type
- N-Channel
- Type
- Parameter
- Id max @ 25°C (A)
- 14.2
- Published
- Yes
- Qg typ (nC)
- 5.5
- Qoss (nC)
- 27
- Qrr typ (nC)
- 0
- RDSON (Typ) (mΩ)
- 150
- RDSON (max) (mΩ)
- 180
- Ron * Qoss (FOM)
- 4050
- V(TR)DSS max (V)
- 800
- Vds min (V)
- 700
Download datasheets and manufacturer documentation for Renesas TP70H150G4LSGB-TR.
The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating. This device delivers superior performance, standard drive compatibility, easy adoption, and enhanced reliability.
- 150mOhm, 700V GaN Device in PQFN 8x8 industry package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- 2kV HBM ESD rating
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
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