Renesas TP65H050G4YS
Manufacturer No:
TP65H050G4YS
Manufacturer:
Renesas
Package:
Description:
650V 50mΩ SuperGaN FET in TO247-4
Quantity:
In Stock :8708
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TP65H050G4YS Information
Renesas TP65H050G4YS technical specifications, attributes, parameters and parts with similar specifications to Renesas TP65H050G4YS.
- Type
- Parameter
- Pkg. Type
- TO-247-4L
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- 3
- Mounting Type
- Through Hole
- Temp. Range
- -55 to +150°C
- Country of Assembly
- China
- Country of Wafer Fabrication
- Japan
- Price (USD) | 1ku
- 8.46249
- Ciss (Typical) (pF)
- 1000
- Coss (Typical) (pF)
- 110
- Type
- Parameter
- FET Type
- N-Channel
- Id max @ 25°C (A)
- 35
- Lead Count (#)
- 4
- Qg typ (nC)
- 16
- Qoss (nC)
- 112
- Qrr typ (nC)
- 0
- Qualification Level
- Standard
- RDSON (Typ) (mΩ)
- 50
- RDSON (max) (mΩ)
- 60
- Ron * Qoss (FOM)
- 5600
Download datasheets and manufacturer documentation for Renesas TP65H050G4YS.
The TP65H050G4YS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly-used gate driver
- Kelvin source for improved performance
- Pin-to-pin Drop-in with Si and SiC TO-247-4 (note: tab is source versus drain)
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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