Renesas TP65H030G4PQS
Manufacturer No:
TP65H030G4PQS
Manufacturer:
Renesas
Package:
Description:
650V 30mΩ SuperGaN FET in TOLL
Quantity:
In Stock :7537
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TP65H030G4PQS Information
Renesas TP65H030G4PQS technical specifications, attributes, parameters and parts with similar specifications to Renesas TP65H030G4PQS.
- Type
- Parameter
- Pkg. Type
- TOLL
- Carrier Type
- Tape & Reel
- Moisture Sensitivity Level (MSL)
- 3
- Mounting Type
- Surface Mount
- Temp. Range
- -55 to +150°C
- Ciss (Typical) (pF)
- 1500
- Coss (Typical) (pF)
- 127
- FET Type
- N-Channel
- Id max @ 25°C (A)
- 55.7
- Qg typ (nC)
- 24.5
- Type
- Parameter
- Qoss (nC)
- 135
- Qrr typ (nC)
- 0
- Qualification Level
- Standard
- Quality Level
- Standard
- RDSON (Typ) (mΩ)
- 30
- RDSON (max) (mΩ)
- 41
- Ron * Qoss (FOM)
- 4050
- V(TR)DSS max (V)
- 800
- Vds min (V)
- 650
- Vth typ (V)
- 4
Download datasheets and manufacturer documentation for Renesas TP65H030G4PQS.
The TP65H030G4PQS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TOLL package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a state-of-the-art high voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
- 30mOhm, 650V GaN Device in TOLL package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Zero reverse recovery charge
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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