ONSEMI TN6714A_D27Z

Manufacturer No:

TN6714A_D27Z

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 Long Body (Formed Leads)

Description:

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole

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In Stock :Available

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TN6714A_D27Z information

ONSEMI TN6714A_D27Z technical specifications, attributes, parameters and parts with similar specifications to ONSEMI TN6714A_D27Z.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)

Supplier Device Package
TO-226

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Power - Max
1W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1A 1V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max)
30V

Current - Collector (Ic) (Max)
2A

Download datasheets and manufacturer documentation for ONSEMI TN6714A_D27Z.

Datasheets:

onsemiconductor-tn6714a-datasheets-9507.pdf

TN6714A_D27Z Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 1A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

TN6714A_D27Z Features

the DC current gain for this device is 50 @ 1A 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-226

TN6714A_D27Z Applications

There are a lot of ON Semiconductor
TN6714A_D27Z applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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