Microchip TN2540N3-G-P002

Manufacturer No:

TN2540N3-G-P002

Manufacturer:

Microchip

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 12 Ohm

Quantity:

In Stock :4892

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

TN2540N3-G-P002 Information

Microchip TN2540N3-G-P002 technical specifications, attributes, parameters and parts with similar specifications to Microchip TN2540N3-G-P002.

Type
Parameter

BVdss min (V)
400

Rds (on) max (Ohms)
12

CISSmax (pF)
125

Vgs(th) max (V)
2.0

Package
TO-92, SOT-89

Type
Parameter

Download datasheets and manufacturer documentation for Microchip TN2540N3-G-P002.

Application Notes:

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Data Sheets:

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This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.