Microchip TN2124K1-G

Manufacturer No:

TN2124K1-G

Manufacturer:

Microchip

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 15 Ohm

Quantity:

In Stock :1204

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

TN2124K1-G Information

Microchip TN2124K1-G technical specifications, attributes, parameters and parts with similar specifications to Microchip TN2124K1-G.

Type
Parameter

BVdss min (V)
240

Rds (on) max (Ohms)
15

CISSmax (pF)
50

Vgs(th) max (V)
2.0

Package
SOT-23

Type
Parameter

Download datasheets and manufacturer documentation for Microchip TN2124K1-G.

Data Sheets:

751efa34f06af9335630152afb42f849.pdf

Application Notes:

745c1ee8a9ed47426d584373c6a5f8b7.pdf

dff88685ac5138ab05f86f0b2c996f38.pdf

d78d5e81e365278d2ee0f546e3de7da4.pdf

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.