Microchip TN0620N3-G-P002
Manufacturer No:
TN0620N3-G-P002
Manufacturer:
Microchip
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 200V, 6.0 Ohm
Quantity:
In Stock :1124
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 22 - Tue, Jun 23, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TN0620N3-G-P002 Information
Microchip TN0620N3-G-P002 technical specifications, attributes, parameters and parts with similar specifications to Microchip TN0620N3-G-P002.
- Type
- Parameter
- BVdss min (V)
- 200
- Rds (on) max (Ohms)
- 6.0
- CISSmax (pF)
- 150
- Vgs(th) max (V)
- 1.6
- Package
- TO-92
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip TN0620N3-G-P002.
Application Notes:
Data Sheets:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
- Low threshold - 1.6V max.
- High input impedance
- Low input capacitance - 110pF typical
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
TN0620N3-G-P002 FAQ
Can I request a quote for TN0620N3-G-P002?
TN0620N3-G-P002 from Microchip is ready for RFQ submission. Send your target quantity and requirements, and AIChipLink will check current availability, lead time, and quantity-based pricing.
Why is pricing not shown as a fixed value for TN0620N3-G-P002?
The final price for TN0620N3-G-P002 depends on requested quantity, supply conditions, date code, package option, and destination. An RFQ lets us return the current market quote for your order.
Which specifications should I review for TN0620N3-G-P002?
TN0620N3-G-P002 is a Microchip Power MOSFETs and Small-Signal MOSFETs part. Key details include Rds (on) max (Ohms): 6.0 and Vgs(th) max (V): 1.6; contact us if you need the specifications verified before sourcing.
When will I receive a quotation for TN0620N3-G-P002?
After you submit the RFQ for TN0620N3-G-P002, our sales team typically replies within 24 hours with availability, unit pricing, lead time, shipping choices, and possible substitutes.
What is the expected shipping time for TN0620N3-G-P002?
Once stock for TN0620N3-G-P002 is confirmed, available inventory can generally ship within 1–2 business days. The final schedule depends on quantity, warehouse source, and delivery address.
Can AIChipLink help find alternatives to TN0620N3-G-P002?
Yes. If TN0620N3-G-P002 is unavailable, end-of-life, or outside your schedule, we can review comparable Microchip Power MOSFETs and Small-Signal MOSFETs parts and compatible replacement options.
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