Texas Instruments TMCS1126A3BQDVGR
Manufacturer No:
TMCS1126A3BQDVGR
Manufacturer:
Texas Instruments
Package:
Description:
80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT
Quantity:
In Stock :1893
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TMCS1126A3BQDVGR Information
Texas Instruments TMCS1126A3BQDVGR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments TMCS1126A3BQDVGR.
- Type
- Parameter
- Continuous current (max) (A)
- 80
- Working isolation voltage (VIOWM) (Vrms)
- 600
- Sensitivity (typ) (mV/mT)
- 15, 25, 30, 33, 40, 50, 66, 75, 100, 150
- Input offset current (±) (max) (mA)
- 20, 25, 26.7, 30, 33, 37.5, 40, 45, 45.45, 50, 53.3, 60.6, 62.5, 66.7, 80, 100
- Input offset current drift (±) (typ) (µA/°C)
- 200, 667, 757.6, 800, 933, 1000, 1200, 1212, 1330
- Features
- Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection
- Supply voltage (max) (V)
- 5.5
- Supply voltage (min) (V)
- 3
- Iq (max) (mA)
- 14
- Small-signal bandwidth (kHz)
- 500
- Type
- Parameter
- Sensitivity error (%)
- 0.4, 1
- Sensitivity error drift (±) (max) (ppm/°C)
- 50, 100
- Rating
- Catalog
- Operating temperature range (°C)
- -40 to 125
- Creepage (min) (mm)
- 8.1
- Clearance (min) (mm)
- 8.1
- Isolation rating
- Reinforced
- Surge isolation voltage (VIOSM) (VPK)
- 10000
- Package
- SOIC (DVG)
- Pins
- 10
Download datasheets and manufacturer documentation for Texas Instruments TMCS1126A3BQDVGR.
Application note:
Technical article:
EVM User's guide:
Certificate:
Application brief:
Data sheet:
The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.
AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±120A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.
Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides Grade B options at lower-cost.
- High continuous current capability: 80ARMS
- Robust reinforced isolation
- High accuracy - Grade A
- Sensitivity error: ±0.1%
- Sensitivity thermal drift: ±20ppm/°C
- Sensitivity lifetime drift: ±0.2%
- Offset error: ±0.2mV
- Offset thermal drift: ±2µV/°C
- Offset lifetime drift: ±0.2mV
- Non-linearity: ±0.1%
- Standard accuracy - Grade B
- High immunity to external magnetic fields
- Precision zero-current reference output
- Fast Response
- Signal bandwidth: 500kHz
- Response time: 250ns
- Propagation delay: 60ns
- Overcurrent detection response: 100ns
- Operating supply range: 3V to 5.5V
- Bidirectional and unidirectional current sensing
- Multiple sensitivity options:
- Ranging from 15mV/A to 150mV/A
- Safety related certifications
- UL 1577 Component Recognition Program
- IEC/CB 62368-1
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