TOSHIBA TK210V65Z,LQ

Manufacturer No:

TK210V65Z,LQ

Manufacturer:

TOSHIBA

Package:

4-VSFN Exposed Pad

Description:

MOSFET (Metal Oxide) N-Channel 210mOhm @ 7.5A, 10V ±30V 1370 pF @ 300 V 25 nC @ 10 V 650 V 4-VSFN Exposed Pad

Quantity:

In Stock :5018

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

TK210V65Z,LQ Information

TOSHIBA TK210V65Z,LQ technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TK210V65Z,LQ.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
4-VSFN Exposed Pad

Supplier Device Package
4-DFN-EP (8x8)

Mfr
Toshiba Semiconductor and Storage

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
130W (Tc)

Base Product Number
TK210V65

Series
DTMOSVI

Type
Parameter

Operating Temperature
150°C

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
210mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id
4V @ 610?A

Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 300 V

Current - Continuous Drain (Id) @ 25°C
15A (Ta)

Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for TOSHIBA TK210V65Z,LQ.

TK210V65Z,LQ Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1370 pF @ 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650 V.