TOSHIBA TK13A60D(STA4,Q,M)

Manufacturer No:

TK13A60D(STA4,Q,M)

Manufacturer:

TOSHIBA

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel Tube 430mOhm @ 6.5A, 10V ±30V 2300pF @ 25V 40nC @ 10V 600V TO-220-3 Full Pack

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TK13A60D(STA4,Q,M) information

TOSHIBA TK13A60D(STA4,Q,M) technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TK13A60D(STA4,Q,M).

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Number of Pins
3

Supplier Device Package
TO-220SIS

Operating Temperature
150°C TJ

Packaging
Tube

Series
?-MOSVII

Published
1997

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Power Dissipation-Max
50W Tc

Power Dissipation
50W

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
430mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2300pF @ 25V

Current - Continuous Drain (Id) @ 25°C
13A Ta

Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Fall Time (Typ)
25 ns

Continuous Drain Current (ID)
13A

Gate to Source Voltage (Vgs)
30V

Input Capacitance
2.3nF

Rds On Max
430 m?

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for TOSHIBA TK13A60D(STA4,Q,M).

Datasheets:

toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf

TK13A60D(STA4,Q,M) Overview

The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK13A60D(STA4,Q,M) Features

a continuous drain current (ID) of 13A
a 600V drain to source voltage (Vdss)

TK13A60D(STA4,Q,M) Applications

There are a lot of Toshiba Semiconductor and Storage
TK13A60D(STA4,Q,M) applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

User Guide

PURCHASE

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IMPORTANT NOTICE

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SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.