TOSHIBA TK12P60W,RVQ
Manufacturer No:
TK12P60W,RVQ
Manufacturer:
TOSHIBA
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 340mOhm @ 5.8A, 10V ±30V 890pF @ 300V 25nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5558
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TK12P60W,RVQ Information
TOSHIBA TK12P60W,RVQ technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TK12P60W,RVQ.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- DPAK
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- DTMOSIV
- Published
- 2014
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 100W Tc
- Element Configuration
- Single
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 340mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id
- 3.7V @ 600?A
- Input Capacitance (Ciss) (Max) @ Vds
- 890pF @ 300V
- Current - Continuous Drain (Id) @ 25°C
- 11.5A Ta
Download datasheets and manufacturer documentation for TOSHIBA TK12P60W,RVQ.
TK12P60W,RVQ Overview
A device's maximum input capacitance is 890pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 85 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 340mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
TK12P60W,RVQ Features
a continuous drain current (ID) of 11.5A
the turn-off delay time is 85 ns
single MOSFETs transistor is 340mOhm
a 600V drain to source voltage (Vdss)
TK12P60W,RVQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK12P60W,RVQ applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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4.9 M
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15,000+
Warehouse Area(㎡)
