TOSHIBA TK11A60D(STA4,Q,M)
Manufacturer No:
TK11A60D(STA4,Q,M)
Manufacturer:
TOSHIBA
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 650m ? @ 5.5A, 10V ±30V 1550pF @ 25V 28nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :1618
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
TK11A60D(STA4,Q,M) Information
TOSHIBA TK11A60D(STA4,Q,M) technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TK11A60D(STA4,Q,M).
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- ?-MOSVII
- Published
- 2009
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 45W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 650m ? @ 5.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1550pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 11A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 10V
- Rise Time
- 25ns
Download datasheets and manufacturer documentation for TOSHIBA TK11A60D(STA4,Q,M).
TK11A60D(STA4,Q,M) Overview
A device's maximal input capacitance is 1550pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
TK11A60D(STA4,Q,M) Features
a continuous drain current (ID) of 11A
a 600V drain to source voltage (Vdss)
TK11A60D(STA4,Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
TK11A60D(STA4,Q,M) applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
