ONSEMI TIP105
Manufacturer No:
TIP105
Manufacturer:
Package:
TO-220-3
Description:
PNP - Darlington 150°C TJ 50?A 1 Elements TO-220-3 Bulk Through Hole
Quantity:
In Stock :1690
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TIP105 Information
ONSEMI TIP105 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI TIP105.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Supplier Device Package
- TO-220-3
- Weight
- 1.214g
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2007
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -65°C
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 2W
- Current Rating
- -8A
- Number of Elements
- 1
- Polarity
- PNP
- Element Configuration
- Single
Download datasheets and manufacturer documentation for ONSEMI TIP105.
Datasheets:
TIP105 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 100V volts.This product comes in a TO-220-3 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP105 Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
the supplier device package of TO-220-3
TIP105 Applications
There are a lot of ON Semiconductor
TIP105 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
TIP105 Relevant information
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