Microchip TC4451VMF713
Manufacturer No:
TC4451VMF713
Manufacturer:
Microchip
Package:
8-VDFN Exposed Pad
Description:
12 A MOSFET Gate Driver
Quantity:
In Stock :1662
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TC4451VMF713 Information
Microchip TC4451VMF713 technical specifications, attributes, parameters and parts with similar specifications to Microchip TC4451VMF713.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Inverting
- Maximum Supply Voltage (V)
- 18
- Peak Source Output (A)
- 12
- Peak Sink Output (A)
- 12
- Source Resistance (Ω)
- 1
- Sink Resistance (Ω)
- 0.9
- Propagation Delay t<sub>D1</sub> (ns)
- 44
- Propagation Delay t<sub>D2</sub> (ns)
- 44
- Rise Time (t<sub>R</sub>, ns)
- 30
- Type
- Parameter
- Fall Time (t<sub>F</sub>, ns)
- 32
- Capacitive Load Drive
- 10,000 pF in 21 ns
Download datasheets and manufacturer documentation for Microchip TC4451VMF713.
Application Notes:
Data Sheets:
The TC4451/52 are single-output MOSFET gate drivers, which are high-current buffer/gate drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBT). Their high drive current of over 12 A is capable of driving some of largest power transistors in use today. The TC4451/2 have matched leading and falling-edge propagation delay times and have very low cross-conduction current to minimize the overall power dissipation of the device. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, more than 1.5 A of reverse current (of either polarity) being forced back into their outputs. Additionally, all terminals are fully protected against up to 4 kV of electrostatic discharge.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
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In-stock SKU
15,000+
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