Microchip TC4432VPA

Manufacturer No:

TC4432VPA

Manufacturer:

Microchip

Package:

8-DIP (0.300, 7.62mm)

Description:

1.5 A MOSFET Gate Driver

Quantity:

Delivery:

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In Stock :Available

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TC4432VPA information

Microchip TC4432VPA technical specifications, attributes, parameters and parts with similar specifications to Microchip TC4432VPA.

Type
Parameter

MOSFET Driver Type
High Side

Configuration
Non-Inverting

Maximum Supply Voltage (V)
30

Peak Source Output (A)
3.0

Peak Sink Output (A)
1.5

Source Resistance (Ω)
7

Sink Resistance (Ω)
7

Propagation Delay tD1 (ns)
62

Propagation Delay tD2 (ns)
78

Rise Time (tR, ns)
25

Fall Time (tF, ns)
33

Capacitive Load Drive
1,000 pF in 60 ns

Download datasheets and manufacturer documentation for Microchip TC4432VPA.

The TC4431/4432 are 30 V CMOS buffer/gate drivers suitable for use in high-side gate driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7 V. For operation in lower voltages, disable the lockout and start-up circuit by grounding pin 3(LOCK DIS); for all other situations, pin 3 (LOCK DIS) should be left floating. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETs.

Wide Operating Range: 4.5 V to 30 V

High Capacitive Load Drive Capability: 1,000 pF in 25 ns

Short Delay Times: < 78 ns (Typical)

With Logic ''1'' Input: 2.5 mA

With Logic ''0'' Input: 300 µA

Low Output Impedance: 7 Ω (Typical)

Latch-Up Protected: Will Withstand > 300 µA

Reverse Current

ESD Protected: 4 kV

User Guide

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