Microchip TC4422ESM713
Manufacturer No:
TC4422ESM713
Manufacturer:
Microchip
Package:
8-SOIC (0.209, 5.30mm Width)
Description:
9 A MOSFET Gate Driver
Quantity:
In Stock :7618
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TC4422ESM713 Information
Microchip TC4422ESM713 technical specifications, attributes, parameters and parts with similar specifications to Microchip TC4422ESM713.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Non-Inverting
- Maximum Supply Voltage (V)
- 20
- Peak Source Output (A)
- 9
- Peak Sink Output (A)
- 9
- Source Resistance (Ω)
- 1.4
- Sink Resistance (Ω)
- 0.9
- Propagation Delay t<sub>D1</sub> (ns)
- 50
- Propagation Delay t<sub>D2</sub> (ns)
- 65
- Rise Time (t<sub>R</sub>, ns)
- 60
- Type
- Parameter
- Fall Time (t<sub>F</sub>, ns)
- 60
- Capacitive Load Drive
- 10,000 pF in 60 ns
Download datasheets and manufacturer documentation for Microchip TC4422ESM713.
Data Sheets:
Application Notes:
User Guide:
The TC4421/4422 are high current buffer/gate drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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