Microchip TC4422AVMF
Manufacturer No:
TC4422AVMF
Manufacturer:
Microchip
Package:
8-VDFN Exposed Pad
Description:
9 A MOSFET Gate Driver
Quantity:
In Stock :3916
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TC4422AVMF Information
Microchip TC4422AVMF technical specifications, attributes, parameters and parts with similar specifications to Microchip TC4422AVMF.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Non-Inverting
- Maximum Supply Voltage (V)
- 18
- Peak Source Output (A)
- 9
- Peak Sink Output (A)
- 9
- Source Resistance (Ω)
- 2
- Sink Resistance (Ω)
- 1.6
- Propagation Delay t<sub>D1</sub> (ns)
- 60
- Propagation Delay t<sub>D2</sub> (ns)
- 60
- Rise Time (t<sub>R</sub>, ns)
- 28
- Type
- Parameter
- Fall Time (t<sub>F</sub>, ns)
- 26
- Capacitive Load Drive
- 4,700 pF in 15 ns
Download datasheets and manufacturer documentation for Microchip TC4422AVMF.
Application Notes:
Data Sheets:
Brochures:
The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.
These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET gate drivers fit into most any application where high gate/line capacitance drive is required.
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