Qorvo T1G4020036-FS
Qorvo T1G4020036-FS

Qorvo T1G4020036-FS

Manufacturer No:

T1G4020036-FS

Manufacturer:

Qorvo

Package:

FLATPACK, R-CDFP-F4

Description:

RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4

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In Stock :9785

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

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Shipped from：HK Warehouse
Expected Shipping：Sat, Oct 17 - Sun, Oct 18, 2026
Date Code：Within 2 Years

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

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Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Available from AS9120 Certified Supplier, AIChipLink delivers high-reliability electronic components supported by certified quality management, rigorous inspection processes, counterfeit mitigation controls, and full traceability systems. Our operations comply with AS9120, ISO 9001:2015, and IECQ ESD standards to support aerospace, industrial, defense, and mission-critical applications.

T1G4020036-FS Information

Qorvo T1G4020036-FS technical specifications, attributes, parameters and parts with similar specifications to Qorvo T1G4020036-FS.

  • Type
  • Parameter
  • RoHS Status
  • RoHS Compliant
  • Part Life Cycle Code
  • Active
  • Ihs Manufacturer
  • QORVO INC
  • Package Description
  • FLATPACK, R-CDFP-F4
  • Reach Compliance Code
  • compliant
  • ECCN Code
  • 3A001.B.3.A.3
  • Case Connection
  • SOURCE
  • Configuration
  • SEPARATE, 2 ELEMENTS
  • Drain Current-Max (ID)
  • 24 A
  • FET Technology
  • HIGH ELECTRON MOBILITY
  • Type
  • Parameter
  • Highest Frequency Band
  • S BAND
  • JESD-30 Code
  • R-CDFP-F4
  • Moisture Sensitivity Level
  • 3
  • Number of Elements
  • 2
  • Number of Terminals
  • 4
  • Operating Mode
  • DEPLETION MODE
  • Package Body Material
  • CERAMIC, METAL-SEALED COFIRED
  • Package Shape
  • RECTANGULAR
  • Package Style
  • FLATPACK
  • Peak Reflow Temperature (Cel)
  • 260

T1G4020036-FS FAQ

Can I request a quote for T1G4020036-FS?

T1G4020036-FS from Qorvo is ready for RFQ submission. Send your target quantity and requirements, and AIChipLink will check current availability, lead time, and quantity-based pricing.

Why is pricing not shown as a fixed value for T1G4020036-FS?

The final price for T1G4020036-FS depends on requested quantity, supply conditions, date code, package option, and destination. An RFQ lets us return the current market quote for your order.

Which specifications should I review for T1G4020036-FS?

T1G4020036-FS is a Qorvo RF Transistors part. Key details include Peak Reflow Temperature (Cel): 260 and Transistor Element Material: GALLIUM NITRIDE; contact us if you need the specifications verified before sourcing.

When will I receive a quotation for T1G4020036-FS?

After you submit the RFQ for T1G4020036-FS, our sales team typically replies within 24 hours with availability, unit pricing, lead time, shipping choices, and possible substitutes.

What is the expected shipping time for T1G4020036-FS?

Once stock for T1G4020036-FS is confirmed, available inventory can generally ship within 1–2 business days. The final schedule depends on quantity, warehouse source, and delivery address.

Can AIChipLink help find alternatives to T1G4020036-FS?

Yes. If T1G4020036-FS is unavailable, end-of-life, or outside your schedule, we can review comparable Qorvo RF Transistors parts and compatible replacement options.