VISHAY SUD09P10-195-GE3
Manufacturer No:
SUD09P10-195-GE3
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 195m ? @ 3.6A, 10V ±20V 1055pF @ 50V 34.8nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
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SUD09P10-195-GE3 Information
VISHAY SUD09P10-195-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SUD09P10-195-GE3.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- Published
- 2010
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Resistance
- 195mOhm
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for VISHAY SUD09P10-195-GE3.
Datasheets:
RohsStatement:
SUD09P10-195-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1055pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -8.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-100V. And this device has -100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SUD09P10-195-GE3 Features
a continuous drain current (ID) of -8.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 33 ns
a threshold voltage of -1V
a 100V drain to source voltage (Vdss)
SUD09P10-195-GE3 Applications
There are a lot of Vishay Siliconix
SUD09P10-195-GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
SUD09P10-195-GE3 Relevant information
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