ST STWA75N65DM6

Manufacturer No:

STWA75N65DM6

Manufacturer:

ST

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel 36mOhm @ 37.5A, 10V ±25V 5700 pF @ 100 V 118 nC @ 10 V 650 V TO-247-3

Quantity:

In Stock :2612

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 30 - Sun, May 31, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STWA75N65DM6 Information

ST STWA75N65DM6 technical specifications, attributes, parameters and parts with similar specifications to ST STWA75N65DM6.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Supplier Device Package
TO-247 Long Leads

Mfr
STMicroelectronics

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
480W (Tc)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
36mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
5700 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
75A (Tc)

Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STWA75N65DM6.

STWA75N65DM6 Overview

The maximum input capacitance of this device is 5700 pF @ 100 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650 V in order to operate.