ST STWA50N65DM2AG

Manufacturer No:

STWA50N65DM2AG

Manufacturer:

ST

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel 87m ? @ 19A, 10V ±25V 3200pF @ 100V 69nC @ 10V 650V TO-247-3

Quantity:

In Stock :8255

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STWA50N65DM2AG Information

ST STWA50N65DM2AG technical specifications, attributes, parameters and parts with similar specifications to ST STWA50N65DM2AG.

Type
Parameter

Factory Lead Time
17 Weeks

Mounting Type
Through Hole

Package / Case
TO-247-3

Operating Temperature
-55°C~150°C TJ

Series
Automotive, AEC-Q101, MDmesh? DM2

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
compliant

Type
Parameter

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STWA50

Power Dissipation-Max
300W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
87m ? @ 19A, 10V

Vgs(th) (Max) @ Id
5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
3200pF @ 100V

Current - Continuous Drain (Id) @ 25°C
38A Tc

Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V

Drain to Source Voltage (Vdss)
650V

Download datasheets and manufacturer documentation for ST STWA50N65DM2AG.

STWA50N65DM2AG Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3200pF @ 100V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).