

ST STW70N60DM6
Manufacturer No:
STW70N60DM6
Manufacturer:
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel 600V TO-247-3
Quantity:


In Stock :6166
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STW70N60DM6 Information
ST STW70N60DM6 technical specifications, attributes, parameters and parts with similar specifications to ST STW70N60DM6.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Series
- MDmesh? DM6
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Type
- Parameter
- Base Part Number
- STW70N
- FET Type
- N-Channel
- Current - Continuous Drain (Id) @ 25°C
- 62A
- Drain to Source Voltage (Vdss)
- 600V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ST STW70N60DM6.
STW70N60DM6 Description
These MDmesh DM6 fast-recovery diode series high-voltage N-channel Power MOSFETs. In comparison to the previous MDmesh fast generation, DM6 offers one of the most efficient switching behaviors on the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters, along with very low recovery charge (Qrr), recovery time (trr), and excellent improvements in RDS(on) per area.
STW70N60DM6 Features
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
STW70N60DM6 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
STW70N60DM6 Relevant information
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