ST STW68N65DM6-4AG

Manufacturer No:

STW68N65DM6-4AG

Manufacturer:

ST

Package:

TO-247-4

Description:

MOSFET (Metal Oxide) N-Channel 39mOhm @ 36A, 10V ±25V 5900 pF @ 100 V 118 nC @ 10 V 650 V TO-247-4

Quantity:

In Stock :8320

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Shipped from：HK Warehouse

Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STW68N65DM6-4AG Information

ST STW68N65DM6-4AG technical specifications, attributes, parameters and parts with similar specifications to ST STW68N65DM6-4AG.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-4

Supplier Device Package
TO-247-4

Mfr
STMicroelectronics

Package
Tube

Product Status
Active

Power Dissipation (Max)
480W (Tc)

Base Product Number
STW68

Series
Automotive, AEC-Q101, MDmesh?

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
39mOhm @ 36A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
5900 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
72A (Tc)

Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STW68N65DM6-4AG.

STW68N65DM6-4AG Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5900 pF @ 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650 V.