ST STW68N60M6-4

Manufacturer No:

STW68N60M6-4

Manufacturer:

ST

Package:

TO-247-4

Description:

MOSFET (Metal Oxide) N-Channel 41m ? @ 31.5A, 10V ±25V 4360pF @ 100V 106nC @ 10V 600V TO-247-4

Quantity:

In Stock :2963

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STW68N60M6-4 Information

ST STW68N60M6-4 technical specifications, attributes, parameters and parts with similar specifications to ST STW68N60M6-4.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Through Hole

Package / Case
TO-247-4

Operating Temperature
-55°C~150°C TJ

Series
MDmesh? M6

Part Status
Active

Technology
MOSFET (Metal Oxide)

Reach Compliance Code
compliant

Power Dissipation-Max
390W Tc

FET Type
N-Channel

Type
Parameter

Rds On (Max) @ Id, Vgs
41m ? @ 31.5A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
4360pF @ 100V

Current - Continuous Drain (Id) @ 25°C
63A Tc

Gate Charge (Qg) (Max) @ Vgs
106nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STW68N60M6-4.

Datasheets:

stmicroelectronics-stw68n60m64-datasheets-6950.pdf

STW68N60M6-4 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4360pF @ 100V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).