ST STW57N65M5-4
Manufacturer No:
STW57N65M5-4
Manufacturer:
ST
Package:
TO-247-4
Description:
MOSFET (Metal Oxide) N-Channel Tube 63m ? @ 21A, 10V ±25V 4200pF @ 100V 98nC @ 10V TO-247-4
Quantity:
In Stock :2369
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STW57N65M5-4 Information
ST STW57N65M5-4 technical specifications, attributes, parameters and parts with similar specifications to ST STW57N65M5-4.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 26 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-4
- Number of Pins
- 4
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- MDmesh? V
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Powers
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STW57N
- Power Dissipation-Max
- 250W Tc
- Element Configuration
- Single
- Turn On Delay Time
- 79 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 63m ? @ 21A, 10V
Download datasheets and manufacturer documentation for ST STW57N65M5-4.
STW57N65M5-4 Overview
A device's maximum input capacitance is 4200pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 42A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 79 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STW57N65M5-4 Features
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 14 ns
STW57N65M5-4 Applications
There are a lot of STMicroelectronics
STW57N65M5-4 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
