ST STW56N65M2-4
Manufacturer No:
STW56N65M2-4
Manufacturer:
ST
Package:
TO-247-4
Description:
MOSFET (Metal Oxide) N-Channel Tube 62m ? @ 24.5A, 10V ±25V 3900pF @ 100V 93nC @ 10V 650V TO-247-4
Quantity:
In Stock :4573
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STW56N65M2-4 Information
ST STW56N65M2-4 technical specifications, attributes, parameters and parts with similar specifications to ST STW56N65M2-4.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 26 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-4
- Number of Pins
- 4
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- MDmesh? M2
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STW56N
- Power Dissipation-Max
- 358W Tc
- Element Configuration
- Single
- Turn On Delay Time
- 19 ns
Download datasheets and manufacturer documentation for ST STW56N65M2-4.
STW56N65M2-4 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3900pF @ 100V.This device conducts a continuous drain current (ID) of 49A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 146 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW56N65M2-4 Features
a continuous drain current (ID) of 49A
the turn-off delay time is 146 ns
a 650V drain to source voltage (Vdss)
STW56N65M2-4 Applications
There are a lot of STMicroelectronics
STW56N65M2-4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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