ST STW54NM65ND
Manufacturer No:
STW54NM65ND
Manufacturer:
ST
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 65m ? @ 24.5A, 10V ±25V 6200pF @ 50V 188nC @ 10V TO-247-3
Quantity:
In Stock :2317
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STW54NM65ND Information
ST STW54NM65ND technical specifications, attributes, parameters and parts with similar specifications to ST STW54NM65ND.
- Type
- Parameter
- Factory Lead Time
- 42 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- FDmesh? II
- JESD-609 Code
- e3
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 65MOhm
- Terminal Finish
- Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STW54N
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ST STW54NM65ND.
STW54NM65ND Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 850 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6200pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 49A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 152 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW54NM65ND Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 152 ns
STW54NM65ND Applications
There are a lot of STMicroelectronics
STW54NM65ND applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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12.28 M
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