ST STW50N65DM6

Manufacturer No:

STW50N65DM6

Manufacturer:

ST

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel 91mOhm @ 16.5A, 10V ±25V 52500 pF @ 100 V 52.5 nC @ 10 V 650 V TO-247-3

Quantity:

In Stock :3873

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STW50N65DM6 Information

ST STW50N65DM6 technical specifications, attributes, parameters and parts with similar specifications to ST STW50N65DM6.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Supplier Device Package
TO-247 Long Leads

Mfr
STMicroelectronics

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
250W (Tc)

Base Product Number
STW50

Series
MDmesh? DM6

Type
Parameter

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
91mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
52500 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
33A (Tc)

Gate Charge (Qg) (Max) @ Vgs
52.5 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STW50N65DM6.

STW50N65DM6 Overview

A device's maximum input capacitance is 52500 pF @ 100 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).