ST STW36NM60ND
Manufacturer No:
STW36NM60ND
Manufacturer:
ST
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 110m ? @ 14.5A, 10V ±25V 2785pF @ 50V 80.4nC @ 10V 600V TO-247-3
Quantity:
In Stock :3876
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STW36NM60ND Information
ST STW36NM60ND technical specifications, attributes, parameters and parts with similar specifications to ST STW36NM60ND.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- Automotive, AEC-Q101, FDmesh? II
- JESD-609 Code
- e3
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Resistance
- 110mOhm
- Terminal Finish
- Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STW36N
- Power Dissipation-Max
- 190W Tc
- Element Configuration
- Single
- Power Dissipation
- 190W
Download datasheets and manufacturer documentation for ST STW36NM60ND.
STW36NM60ND Overview
A device's maximum input capacitance is 2785pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 29A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 111 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
STW36NM60ND Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 111 ns
a 600V drain to source voltage (Vdss)
STW36NM60ND Applications
There are a lot of STMicroelectronics
STW36NM60ND applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
