ST STW30NM60N

Manufacturer No:

STW30NM60N

Manufacturer:

ST

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 130m ? @ 12.5A, 10V ±30V 2700pF @ 50V 91nC @ 10V TO-247-3

Quantity:

In Stock :5989

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Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STW30NM60N Information

ST STW30NM60N technical specifications, attributes, parameters and parts with similar specifications to ST STW30NM60N.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

Series
MDmesh? II

JESD-609 Code
e3

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

Resistance
130mOhm

Terminal Finish
TIN

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
unknown

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STW30N

Pin Count
3

Download datasheets and manufacturer documentation for ST STW30NM60N.

Datasheets:

stmicroelectronics-stw30nm60n-datasheets-0310.pdf

stmicroelectronics-stw30nm60n-datasheets-9331.pdf

stmicroelectronics-stw30nm60n-datasheets-9332.pdf

stmicroelectronics-stw30nm60n-datasheets-9333.pdf

STW30NM60N Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2700pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 125 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STW30NM60N Features

the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 125 ns