ST STW29NK50ZD
Manufacturer No:
STW29NK50ZD
Manufacturer:
ST
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 130m ? @ 14.5A, 10V ±30V 6450pF @ 25V 200nC @ 10V TO-247-3
Quantity:
In Stock :8605
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Shipped from：HK Warehouse
Expected Shipping：Wed, May 27 - Thu, May 28, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STW29NK50ZD Information
ST STW29NK50ZD technical specifications, attributes, parameters and parts with similar specifications to ST STW29NK50ZD.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- SuperMESH?
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 500V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 29A
- Base Part Number
- STW29N
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for ST STW29NK50ZD.
STW29NK50ZD Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 6450pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 29A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 133 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 116A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 45 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STW29NK50ZD Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 133 ns
based on its rated peak drain current 116A.
STW29NK50ZD Applications
There are a lot of STMicroelectronics
STW29NK50ZD applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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