ST STW24NK55Z
Manufacturer No:
STW24NK55Z
Manufacturer:
ST
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 220m ? @ 11.5A, 10V ±30V 4397.5pF @ 25V 130nC @ 10V TO-247-3
Quantity:
In Stock :8711
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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STW24NK55Z Information
ST STW24NK55Z technical specifications, attributes, parameters and parts with similar specifications to ST STW24NK55Z.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- SuperMESH?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STW24N
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Power Dissipation-Max
- 285W Tc
Download datasheets and manufacturer documentation for ST STW24NK55Z.
STW24NK55Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4397.5pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 23A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.It is [136 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW24NK55Z Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 136 ns
based on its rated peak drain current 92A.
STW24NK55Z Applications
There are a lot of STMicroelectronics
STW24NK55Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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In-stock SKU
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