STV160NF02LAT4-ST-Price, Stock & Datasheet

STV160NF02LAT4 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 330 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 160A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 105 ns.Peak drain current is 640A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

STV160NF02LAT4 Features

the avalanche energy rating (Eas) is 330 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 105 ns
based on its rated peak drain current 640A.