STS5N15F3-ST-Price, Stock & Datasheet

STS5N15F3 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.There is no drain current on this device since the maximum continuous current it can conduct is 5A.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 20A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STS5N15F3 Features

the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 20A.