ST STS4NF100
Manufacturer No:
STS4NF100
Manufacturer:
ST
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 70m ? @ 2A, 10V ±20V 870pF @ 25V 41nC @ 10V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :9134
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STS4NF100 Information
ST STS4NF100 technical specifications, attributes, parameters and parts with similar specifications to ST STS4NF100.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- STripFET? II
- JESD-609 Code
- e4
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for ST STS4NF100.
Datasheets:
STS4NF100 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [49 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 58 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STS4NF100 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
STS4NF100 Applications
There are a lot of STMicroelectronics
STS4NF100 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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