STS15N4LLF3-ST-Price, Stock & Datasheet

STS15N4LLF3 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2530pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.5A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

STS15N4LLF3 Features

the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 60A.
a threshold voltage of 1V