ST STQ3N45K3-AP
Manufacturer No:
STQ3N45K3-AP
Manufacturer:
ST
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 3.8 ? @ 500mA, 10V ±30V 150pF @ 25V 6nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Quantity:
In Stock :9899
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STQ3N45K3-AP Information
ST STQ3N45K3-AP technical specifications, attributes, parameters and parts with similar specifications to ST STQ3N45K3-AP.
- Type
- Parameter
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Box (TB)
- Series
- SuperMESH3?
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Base Part Number
- STQ3
- Pin Count
- 3
Download datasheets and manufacturer documentation for ST STQ3N45K3-AP.
STQ3N45K3-AP Overview
A device's maximum input capacitance is 150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 600mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=450V, and this device has a drain-to-source breakdown voltage of 450V voltage.Its drain current is 0.6A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 2.4A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3.75V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STQ3N45K3-AP Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 450V voltage
based on its rated peak drain current 2.4A.
a threshold voltage of 3.75V
STQ3N45K3-AP Applications
There are a lot of STMicroelectronics
STQ3N45K3-AP applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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