STQ1NK60ZR-AP-ST-Price, Stock & Datasheet

STQ1NK60ZR-AP Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 60 mJ.A device's maximal input capacitance is 94pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 400mA, which represents the maximum continuous current it can conduct.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STQ1NK60ZR-AP Features

the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 400mA
the turn-off delay time is 13 ns
a threshold voltage of 3.75V
a 600V drain to source voltage (Vdss)